Uncovering β-relaxations in amorphous phase-change materials

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Relation between bandgap and resistance drift in amorphous phase change materials

Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal evolution of infrared spectra measured on am...

متن کامل

Signature of tetrahedral Ge in the Raman spectrum of amorphous phase-change materials.

We computed the Raman spectrum of amorphous GeTe by ab initio simulations and empirical bond polarizability models. The calculated spectrum is in very good agreement with experimental data and contains the signatures of all the peculiar local structures of the amorphous phase revealed by recent ab initio simulations, namely, tetrahedral Ge and defective octahedral sites for a fraction of Ge (mo...

متن کامل

Role of activation energy in resistance drift of amorphous phase change materials

*Correspondence: Martin Salinga, Institute of Physics (IA): Physics of New Materials, RWTH Aachen University, Sommerfeldstr. 14, Aachen 52074, Germany e-mail: martin.salinga@ physik.rwth-aachen.de The time evolution of the resistance of amorphous thin films of the phase change materials Ge2Sb2Te5, GeTe and AgIn-Sb2Te is measured during annealing at T = 80◦C. The annealing process is interrupted...

متن کامل

Conductive preferential paths of hot carriers in amorphous phase-change materials

materials Andrea Cappelli, Enrico Piccinini, Feng Xiong, Ashkan Behnam, Rossella Brunetti, Massimo Rudan, Eric Pop, and Carlo Jacoboni Dipartimento di Scienze Fisiche, Informatiche e Matematiche, Universit a di Modena e Reggio Emilia, Via Campi 213/A, I-41125 Modena, Italy “E. De Castro” Advanced Research Center on Electronic Systems (ARCES), Universit a di Bologna, Via Toffano 2/2, I-40125 Bol...

متن کامل

An Algorithm based on Predicting the Interface in Phase Change Materials

Phase change materials are substances that absorb and release thermal energy during the process of melting and freezing. This characteristic makes phase change material (PCM)  a favourite choice to integrate it in buildings. Stephan problem including melting and solidification in PMC materials is an practical problem in many engineering processes. The position of the moving boundary, its veloci...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Science Advances

سال: 2020

ISSN: 2375-2548

DOI: 10.1126/sciadv.aay6726